Semiconductor equipment corporations Applied Materials announced two new manufacturing systems on the 14th to form the minute ...

(Application Note) Here is a new Application Note from Nanosurf on conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts. Chemical-mechanical polishing (CMP) ...

The EPC8010 power transistor, sold in die form, measures 1.75 mm 2 with 100 VDS. Optimized for high speed switching, the device has a maximum R DS(on) of 160 mΩ and input gate charge in the hundreds ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...

New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials ...

Researchers have found a low-cost way for backscatter radios to support high-throughput communication and 5G-speed Gb/sec data transfer using only a single transistor when previously it required ...

Many DSP chips, microprocessors, FPGAs, and ASICs require multiple power supplies that must deliver different voltages in a specific start-up sequence. Out-of-sequence voltages can cause excessive ...

In the era of big data and artificial intelligence, a new approach has emerged for solving combinatorial optimization ...

Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.