Electronic Design

Half-Bridge GaN FET Module Comes In QFN

1. Simplified diagram of the LMG5200 GaN FET power stage. The LMG5200 is a complete, reliable power stage, consisting of a performance optimized driver and power GaN FET. All devices are mounted on a ...
EDN

3-Phase Bridge MOSFET Power Module

The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
EDN

Half Bridge Module

The BSM120D12P2C005 is a half bridge power module consisting of SiC-DMOSFETs and SiC-SBDs from ROHM. With a drain-source voltage of 1200 V and drain current of 120 A, the device has a maximum total ...
Machine Design

1.7 kV SiC Half Bridge Module Simplifies Two-Level Topologies

Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ on-resistance and is encased in a standard 62-mm housing. Cree’s all-silicon carbide (SiC) 1.7 kV half-bridge module has 8 mΩ ...
Electronic Design

All-SiC Power Module Produces 1.7 kV

Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an industry standard 62 mm housing. Powered by Cree's C2MT large area SiC chip technology, the half-bridge module exhibits an 8 ...
Business Wire

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable ...

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s ...